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| 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25C) 0.15 2.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SC4102 / 2SC3906K dissipation 2SC2389S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 0.2 0.3 150 -55~+150 Unit V V V mA W (2) 0.1Min. 0~0.1 Each lead has same dimensions C C ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC3906K (1) 0.4 Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4102 UMT3 RS T T106 3000 2SC3906K SMT3 RS T T146 3000 2SC2389S SPT RS - TP 5000 (3) 1.6 2.8 0.15 (2) !Packaging specifications and hFE Denotes hFE 0.3Min. 0~0.1 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector 2SC2389S 3 4 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base !Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 120 5 - - - 180 - - Typ. - - - - - - - 140 2.5 Max. - - - 0.5 0.5 0.5 560 - - Unit V V V A A V - MHz pF IC=50A IC=1mA IE=50A VCB=100V VEB=4V IC/IB=10mA/1mA VCE=6V, IC=2mA VCE=12V, IE=-2mA, f=100MHz VCB=12V, IE=0A, f=1MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance 1.1 0.95 0.95 1.9 2.9 0.9 1.3 (1) Emitter (2) Base (3) Collector 2.0 This datasheet has been download from: www..com Datasheets for electronics components. |
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